Error tolerance for scaled electronic technologies

Kartik Mohanram, Department of Electrical and Computer Engineering, Rice Universtity, Houston, TX

Abstract: Graphene, which is a monolayer of carbon atoms packed into a two-dimensional honeycomb lattice, is recognized as a promising candidate material for beyond-CMOS nanoelectronics because of its excellent carrier transport properties and high potential for large scale processing and fabrication. However, due to the atomically thin and nanometer-wide geometries of graphene-based nanoribbon FETs (GNRFETs), defects and variability are projected to play an important role in GNRFET circuits. In this talk, I will describe the modeling, simulation, and design challenges that we believe are the key to systematically understand and predict the effects of variability and defects on the performance and reliability of GNRFET circuits.

About the speaker: Kartik Mohanram received the B.Tech. degree in electrical engineering from IIT-Bombay in 1998, and the M.S. and Ph.D. degrees in computer engineering from UT-Austin in 2000 and 2003 respectively. He is currently an assistant professor in the department of Electrical and Computer Engineering at Rice University. His primary research interests are in computer engineering and systems, with an emphasis on modeling, simulation, and computer-aided design of integrated circuits. He is a recipient of the NSF CAREER Award, the ACM/SIGDA Technical Leadership Award, and the A. Richard Newton Graduate Scholarship.